Method and apparatus for making a highly uniform low-stress...

Oscillators – Solid state active element oscillator – Significant distributed parameter resonator

Reexamination Certificate

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C331S1160FE, C331S154000

Reexamination Certificate

active

07868708

ABSTRACT:
The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. The single crystals obtained by this method have a diameter ≧50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. These crystals have an index of refraction uniformity Δn of <1 ppm and a stress birefringence of <1 nm/cm at 193 nm, so that optical elements suitable for DUV lithography can be made from them.

REFERENCES:
patent: 3974389 (1976-08-01), Ferri et al.
patent: 4405691 (1983-09-01), Yale
patent: 4421671 (1983-12-01), Cusano et al.
patent: 6630077 (2003-10-01), Shiang et al.
patent: 6793848 (2004-09-01), Vartuli et al.
patent: 6995374 (2006-02-01), Lefaucheur et al.
patent: 7008558 (2006-03-01), Vartuli et al.
patent: 7019284 (2006-03-01), Srivastava et al.
patent: 7347956 (2008-03-01), Fukuda et al.
patent: 7420219 (2008-09-01), Kang et al.
patent: 7592192 (2009-09-01), Nabeta et al.
patent: 7605373 (2009-10-01), Srivastava
patent: 2001/0008116 (2001-07-01), Melcher et al.
patent: 2002/0195587 (2002-12-01), Srivastava et al.
patent: 2006/0027742 (2006-02-01), Srivastava et al.
patent: 2007/0056505 (2007-03-01), Wehrhan et al.
patent: 2007/0138942 (2007-06-01), Ikada et al.
patent: 2007/0164300 (2007-07-01), Nabeta et al.
patent: 2008/0128623 (2008-06-01), Srivastava
patent: 2009/0176081 (2009-07-01), Wehrhan et al.
patent: 04-097989 (1992-03-01), None
patent: 06-128075 (1994-05-01), None
patent: 06-183877 (1994-07-01), None
patent: 10-251090 (1998-09-01), None
patent: 2000-063196 (2000-02-01), None

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