Metal treatment – Process of modifying or maintaining internal physical... – Producing or treating layered – bonded – welded – or...
Reexamination Certificate
2006-02-21
2006-02-21
Wyszomierski, George (Department: 1742)
Metal treatment
Process of modifying or maintaining internal physical...
Producing or treating layered, bonded, welded, or...
C148S536000, C148S679000, C205S157000, C205S224000, C205S227000
Reexamination Certificate
active
07001471
ABSTRACT:
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
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Chen Lin-Lin
Dundas Curt
Graham Lyndon W.
Ritzdorf Thomas L.
Stevens E. Henry
Perkins Coie LLP
Semitool Inc.
Wyszomierski George
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