Method and apparatus for light span microscopic dark-field displ

Optics: measuring and testing – Inspection of flaws or impurities – Having predetermined light transmission regions

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250563, G01N 2147

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active

047201916

ABSTRACT:
A method used for the inspection of semiconductor structures under a light scan microscope which scans the surface of the wafer or other specimen (12) with a beam of light which is focused in spot form by the objective (18). In order to produce a dark-field image in which the linear semiconductor structures of the wafer are suppressed and only defects and particles of dirt are visible, the signals of four detectors (10a-10d) arranged outside the illuminating aperture of the objective within the channel of the dark-field ring condenser (6) are subjected to a logical "and" operation.

REFERENCES:
patent: 4595289 (1986-06-01), Feldman et al.
patent: 4601577 (1986-07-01), Gotou et al.

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