Coherent light generators – Particular beam control device – Scanning
Reexamination Certificate
2006-09-26
2006-09-26
Menefee, James (Department: 2828)
Coherent light generators
Particular beam control device
Scanning
C438S795000
Reexamination Certificate
active
07113527
ABSTRACT:
When CW laser is irradiated on a semiconductor film while being relatively scanned in a fabrication process of a semiconductor device, many crystal grains extending in a scanning direction are formed. The semiconductor film irradiated in this way has characteristics substantially approximate to those of a single crystal in the scanning direction. However, because productivity and uniformity of laser annealing are low, mass-production is difficult. A plurality of laser beams is processed into linear beams and is allowed to possess mutually superposing portions to form a more elongated linear beam and to thus improve productivity. The linear beams the overlapping to one another have a positional relation satisfying a predetermined limitation formula, and uniformity of laser annealing can be remarkably improved.
REFERENCES:
patent: 4734550 (1988-03-01), Imamura et al.
patent: 4978970 (1990-12-01), Okazaki
patent: 5591668 (1997-01-01), Maegawa et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6335509 (2002-01-01), Jung
patent: 6437284 (2002-08-01), Okamoto et al.
patent: 6535535 (2003-03-01), Yamazaki et al.
patent: 6563843 (2003-05-01), Tanaka
patent: 6570125 (2003-05-01), Suh et al.
patent: 6707614 (2004-03-01), Tanaka
patent: 6770546 (2004-08-01), Yamazaki
patent: 2002/0094008 (2002-07-01), Tanaka
patent: 2003/0024905 (2003-02-01), Tanaka
patent: 2003/0153182 (2003-08-01), Yamazaki et al.
patent: 01-246819 (1989-10-01), None
patent: 04-282869 (1992-10-01), None
patent: 05-315278 (1993-11-01), None
patent: 07-183540 (1995-07-01), None
patent: 09-102468 (1997-04-01), None
patent: 2000-133593 (2000-05-01), None
Hara et al.,Ultra-high Performance Poly-Si TFTs on a Glass by a Stable Scanning CW Laser Lateral Crystallization, AM-LCD '01, Tech. Dig., 2001, pp. 227-230.
Menefee James
Nguyen Phillip
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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