Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Utilizing electromagnetic wave energy during coating
Patent
1990-05-22
1993-05-11
Niebling, John
Electrolysis: processes, compositions used therein, and methods
Electrolytic coating
Utilizing electromagnetic wave energy during coating
205123, 204130, 204242, 204252, 2041293, 437 19, G01R 3126
Patent
active
052098338
ABSTRACT:
A semiconductor crystal wafer is fixed between two electrolyte-filled cells so that the front surface and rear surface thereof are respectively in contact with an electrolyte. A respective electrode is located in the electrolyte, a DC voltage being applied between these electrodes so that the semiconductor-to-electrolyte contact of the one cell is polarized in the conducting direction and the other is polarized in the non-conducting direction. A current flow through the semiconductor crystal body is enabled in that the inhibiting surface of the semiconductor crystal is illuminated and charge carriers are generated as a result thereof. On the basis of the selection of suitable electrolytes and the intensity of illumination, high current density is possible even given high-impedance semiconductor crystal wafers as well as semiconductor crystal bodies having doping steps or pn junctions. The method is particularly simple in many semiconductor processing and analyses methods.
REFERENCES:
patent: 3010885 (1961-11-01), Schink
patent: 3476661 (1969-11-01), Jahn
patent: 4108738 (1978-08-01), Yi Cho et al.
patent: 4166918 (1979-09-01), Nostrand et al.
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4385971 (1983-05-01), Swartz
patent: 4427513 (1984-01-01), Skotheim et al.
patent: 4601960 (1986-07-01), Menezes et al.
patent: 4613417 (1986-09-01), Laskowski et al.
patent: 4628591 (1986-12-01), Zorinsky et al.
patent: 4649227 (1987-03-01), Tributsch et al.
patent: 4734168 (1988-03-01), Bockris et al.
patent: 4786391 (1988-11-01), Clemens
patent: 4841239 (1989-06-01), Foell et al.
Hoffman H. et al. "Photo-Enhanced Etching of n-Si", Appl. Phys., vol. 33, 1984, pp. 243-245.
Grivet F., et al, "Device for Detecting Defects in P. Silicon Substrate", IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. 1979, p. 1499.
D2S, G., "Nondestructive Electrolytic Localization of Pipe Sites in Bipolar Transistors," IBM Technical Disclosure Bulletin, vol. 20, No. 2, (1977).
Foell Helmut
Lehmann Volker
Niebling John
Phasge Arun S,.
Siemens Aktiengesellschaft
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