Method and apparatus for ion implantation

Details Method and apparatus for ion implantation Method and apparatus for ion implantation

1998-04-02

2000-02-29

Westin, Edward P.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504922, 2504923, G21K 510, H01J 37317

Patent

active

060312408

ABSTRACT:
A method of ion implantation is provided by utilizing an ion implantation apparatus comprising a disc having a slit, an ion source, and a scanning mechanism for scanning the ion beam by moving the disc two-dimensionally which includes a motor, a stepping motor etc. The quantity of ions in the ion beam is first measured at a plurality of positions along the longitudinal direction of the slit and a plurality of data sets representing the position in the slit and the quantity of ions in the ion beam is provided. The quantity of ions in the ion beam for the ion implantation is adjusted according to the data sets in order to obtain the uniform dose of ions introduced in the wafer surface.

REFERENCES:
patent: 5451784 (1995-09-01), Loewenhardt et al.
patent: 5760409 (1998-06-01), Chen et al.

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