Method and apparatus for ion formation in an ion implanter

Details Method and apparatus for ion formation in an ion implanter Method and apparatus for ion formation in an ion implanter

1996-05-30

1997-08-26

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504232, 250424, 31511181, H01J 2700

Patent

active

056613083

ABSTRACT:
An ion source for use in an ion implanter. The ion source includes a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A supply of ionizable material routes the material into the gas confinement chamber. An antenna that is supported by the base has a metallic radio frequency conducting segment mounted directly within the gas confinement chamber to deliver ionizing energy into the gas ionization zone.

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patent: 5387843 (1995-02-01), Magayama et al.
patent: 5397962 (1995-03-01), Moslehi

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