Method and apparatus for investigating dielectric semiconductor

Details Method and apparatus for investigating dielectric semiconductor Method and apparatus for investigating dielectric semiconductor

1978-08-09

1980-06-17

Rolinec, Rudolph V.

Electricity: measuring and testing

Conductor identification or location

Inaccessible

324 60C, 324158D, 324158R, G01R 3122, G01R 2726

Patent

active

042086248

ABSTRACT:
A method and apparatus are disclosed for determining electrical properties of dielectric and semiconducting materials and devices by admittance measurement. According to the disclosed method, a sample contained between electrodes is subjected to an essentially sinusoidal radio frequency signal. Simultaneously, the sample is subjected to a perturbation as may be produced, e.g., by thermal, optical, or electron irradiation. Admittance is determined as a current-to-voltage ratio.
According to the invention, signal-to-noise ratio in the output signal is enhanced by establishing a resonant circuit formed by the sample capacitor and an appropriately selected inductor element and pulsing the perturbation synchronous to the resulting resonant oscillation.

REFERENCES:
patent: 3315156 (1967-04-01), Keller
patent: 3605015 (1971-09-01), Copeland
Milnes, A. G., Deep Impurities in Semiconductors, John Wiley & Sons, 1973; p. 215.
Abragam, A., The Principles of Nuclear Magnetism, Oxford Univ. Press, 1961; p. 77.
IEEE Trans. on Electron Devices, Ed.-22, 1975, p. 1055.
Robinson et al., "Nuclear Resonance Absorption Circuit," J. of Sci. Instruments, vol. 36, Dec. 1959, pp. 481-487.
Losee, D. L., "Admittance Spectroscopy . . . ", Appl. Phys. Lett., vol. 21, No. 2, Jul. 15, 1972, pp. 54-56.
Petroff et al., "A New Spectroscopic . . . ", Appl. Phys. Lett., vol. 31, No. 2; Jul. 15, 1977, pp. 60-62.
Miller et al., "Capacitor Transient Spectroscopy", Ann. Rev. Mater. Sci., 1977, pp. 377-448.

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