Method and apparatus for inspecting semiconductor device

Details Method and apparatus for inspecting semiconductor device Method and apparatus for inspecting semiconductor device

2008-02-26

2010-12-14

Tang, Minh N (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S754120

Reexamination Certificate

active

07852102

ABSTRACT:
The magnitude of an amplitude waveform of an electromagnetic wave generated when irradiating a pulse laser beam to a structure A including diffusion regions provided in the structure of a semiconductor device to be inspected is compared with the magnitude of an amplitude waveform of an electromagnetic wave radiated when irradiating the pulse laser beam to a structure A of a reference device measured in advance, and the detection sensitivity of the electromagnetic wave is corrected (S14). Thereafter, measurement errors caused by variations in the detection sensitivity of electromagnetic waves of an inspecting apparatus are eliminated by inspecting the semiconductor device as an inspection target, so that the quality of the semiconductor device is precisely determined (S16).

REFERENCES:
patent: 5708371 (1998-01-01), Koyama
patent: 2006/0006886 (2006-01-01), Yamashita et al.
patent: 2007/0018634 (2007-01-01), Ohtake et al.
patent: 2007/0035726 (2007-02-01), Takahashi et al.
patent: 2006-270063 (2006-10-01), None

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