Method and apparatus for inspecting integrated circuit pattern

Details Method and apparatus for inspecting integrated circuit pattern Method and apparatus for inspecting integrated circuit pattern

2006-04-11

2006-04-11

Karlsen, Ernest (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010

Reexamination Certificate

active

07026830

ABSTRACT:
To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer40formed with a pattern by a resist film is placed on a specimen table21of a patterned wafer inspection apparatus1in opposed relation to a SEM3. An electron beam10of a large current is emitted from an electron gun11and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector16thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit32and a defect determining unit33.Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.

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