Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1998-05-20
2000-06-27
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330 66, 330302, H03F 360
Patent
active
060811609
ABSTRACT:
For use with RF circuitry in which a DC bias circuit provides bias voltage is provided to impedance-matched circuitry, a structure is provided, in which a dielectric member, having a high dielectric constant, is selectively placed adjacent to a bias feed line coupled between the DC bias circuit and the remainder of the circuitry, to maintain high RF impedance while reducing impedance at lower frequencies. The invention has particular applicability to RF amplifiers, to be used for amplifying modulated carriers, such as video signals made up of an RF carrier and a lower-frequency modulation. Where the carrier has a predetermined wavelength, the physical length of the bias feed line and the dielectric constant of the dielectric member are chosen such that an effective length of the bias feed line is a quarter of the wavelength of the carrier.
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Transmission-Line Theory by Peter A. Rizzi, Microwave Engineering Passive Circuits, by Prentice-Hall, Inc. 1998, (pp. 90-91).
Custer James Keith
Keen Charles M.
Veitschegger William Kerr
Mottola Steven J.
Powerwave Technologies Inc.
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