Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-02-20
1991-12-10
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
3072967, 307303, 307311, 3072721, 357 29, H03K 301, H03K 326, H03K 3284, G01T 124
Patent
active
050721330
ABSTRACT:
Bipolar transistors fabricated in separate buried layers of an integrated circuit chip are electrically isolated with a built-in potential barrier established by doping the buried layer with a polarity opposite doping in the chip substrate. To increase the resistance of the bipolar transistors to single-event upsets due to ionized particle radiation, the substrate is biased relative to the buried layer with an external bias voltage selected to offset the built-in potential just enough (typically between about +0.1 to +0.2 volt) to prevent an accumulation of charge in the buried-layer-substrate junction.
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Miller Stanley D.
Phan Trong
The United States of America as represented by the Administrator
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