Method and apparatus for in-situ measuring filament temperature

Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined

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Details

427566, 427577, 427592, 427249, 118666, 118708, 118712, 118715, 118722, 118725, C23C 1626, C23C 1646, C23C 1648, C23C 1652

Patent

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052407365

ABSTRACT:
Provided is a method and apparatus for in-situ measuring filament temperature and the thickness of a film deposited on a substrate disposed within a hot-filament chemical vapor deposition reactor. In accordance with the invention, white light which is emitted directly from the filament and that reflects from the top and bottom surfaces of a deposited film are collected and converted to monochromatic light through the use of simple narrow-banned interference filters operative over specific, yet different, optical banned widths. This information is thereafter used to mathematically calculate the filament temperature, film thickness and growth rate of the deposited film.

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"Characterization of Ion Beam-Induced Surface Modification of Diamond Films by Real Time Spectroscopic Ellipsometry", by Yue Cong, et al., J. Vac. Sci. Technol. A9(3), May/Jun. 1991, pp. 1123-1128.

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