Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-06-10
2000-08-29
Berman, Jack
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25044311, H01J 37317
Patent
active
061112607
ABSTRACT:
During a semiconductor substrate ion implant process thermal energy is supplied to raise the temperature of the semiconductor wafer. The increased temperature of the semiconductor wafer during implantation acts to anneal the implanted impurities or dopants in the wafer, reducing impurity diffusion and reducing the number of fabrication process steps. An ion implant device includes an end station that is adapted for application and control of thermal energy to the end station for raising the temperature of a semiconductor substrate wafer during implantation. The adapted end station includes a heating element for heating the semiconductor substrate wafer, a thermocouple for sensing the temperature of the semiconductor substrate wafer, and a controller for monitoring the sensed temperature and controlling the thermal energy applied to the semiconductor substrate wafer by the heating element. An ion implant device including a system for applying and controlling thermal energy applied to a semiconductor substrate wafer during ion implantation raises the temperature of the wafer to a temperature that is sufficient to activate impurities within the semiconductor substrate wafer when an ion beam is implanting ions to the wafer, but the temperature is insufficient to activate impurities when the ion beam is inactive.
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Dawson Robert
Fulford Jr. H. Jim
Gardner Mark I.
Hause Frederick N.
Michael Mark W.
Advanced Micro Devices , Inc.
Berman Jack
Kelton Margaret M.
Koestner Ken J.
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