Computer-aided design and analysis of circuits and semiconductor – Integrated circuit design processing
Reexamination Certificate
2011-04-26
2011-04-26
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Integrated circuit design processing
C716S101000, C716S106000, C716S112000, C716S132000, C365S185230, C365S189110, C365S230060
Reexamination Certificate
active
07934181
ABSTRACT:
The present invention relates to methods and apparatus for improving the stability of static random access memory (SRAM) cells by using boosted word lines. Specifically, a boosted word line voltage (Vdd′) is applied to the word line of a selected SRAM cell, while such a boosted word line voltage (Vdd′) is sufficiently higher than the power supply voltage (Vdd) of the SRAM cell so as to improve the cell stability to a desired level. Specifically, a specific boosted word line voltage is predetermined for each SRAM cell based on the specific cell configuration, by using a circuit simulation program, such as the BERKELEY-SPICE simulation program. A boost voltage generator is then used to apply the predetermined boosted word line voltage to the selected SRAM cell.
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Hanafi Hussein I.
Williams Richard Q.
Alexanian Vazken
Dinh Paul
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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