Method and apparatus for improving silicon processing...

Solid material comminution or disintegration – Processes – By operations other than force of contact with solid surface

Reexamination Certificate

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C209S002000, C209S235000, C209S288000, C241S023000, C241S024100

Reexamination Certificate

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06874713

ABSTRACT:
A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier. A rotary indent classifier for performing the method includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.

REFERENCES:
patent: 4092446 (1978-05-01), Padovani et al.
patent: 4213937 (1980-07-01), Padovani et al.
patent: 4565913 (1986-01-01), Yatsurugi et al.
patent: 4871117 (1989-10-01), Baueregger et al.
patent: 4971654 (1990-11-01), Burghausen et al.
patent: 5123636 (1992-06-01), Dumler et al.
patent: 5165548 (1992-11-01), Dumler et al.
patent: 5464159 (1995-11-01), Wolf et al.
patent: 5660335 (1997-08-01), Koppl et al.
patent: 5753567 (1998-05-01), Banan et al.
patent: 5791493 (1998-08-01), Meyer
patent: 5820688 (1998-10-01), Koppl et al.
patent: 5851303 (1998-12-01), Hwang et al.
patent: 5976481 (1999-11-01), Kubota et al.
patent: 6024306 (2000-02-01), Koppl et al.
patent: 6063697 (2000-05-01), Wolf et al.
patent: 6284040 (2001-09-01), Holder et al.
patent: 6309467 (2001-10-01), Wochner et al.
patent: 6313013 (2001-11-01), Flottmann et al.
patent: 6375011 (2002-04-01), Flottmann et al.
patent: 20030041795 (2003-03-01), Moroishi et al.
patent: 954425 (1974-09-01), None
patent: 39 13 379 (1989-04-01), None
patent: 42 23 458 (1992-07-01), None
patent: 197 49 127 (1999-06-01), None
patent: 0 329 163 (1989-02-01), None
patent: 0 539 097 (1992-10-01), None
patent: 1 368 224 (1973-02-01), None
patent: 63-287565 (1988-11-01), None
patent: 64-014109 (1989-01-01), None
patent: 2-152554 (1990-06-01), None
patent: 7-61808 (1993-08-01), None
patent: 6-271309 (1994-09-01), None
patent: 10-15422 (1998-01-01), None
patent: 11-169795 (1999-06-01), None
patent: 11-290712 (1999-10-01), None
patent: WO 0161070 (2000-08-01), None
Semiconductor Silicon Crystal Technology, “Silicon Crystal Growth and Wafer Preparation, ” Fumio Shimura, Department of Materials Science and Engineering, North Caroline State University, Raleigh, North Carolina. Academic Press, 1989, pp. 178-213.
U.S. Department of Energy, “Advanced Czochralski Silicon Growth Technology for Photovoltaic Modules,” DOE/JPL-1012-70 (DE83002206) Flat Plate Solar Array Project, Taher Daud and Akaram H. Kachare, Sep. 15, 1982.
Product data sheet; Carter Day No. 3Si Uniflow Product Flow Configuration, Total pp.: 3.
Product data sheet; Carter Day Disc Separation Principles. Total pp.: 3.
Product data sheet; Carter Day Trommel. Total pp.: 3.
Product data sheet; Carter Day Cylinder Configuration. Total pp.: 2.
Product data sheet; Key Technologies Inc. Rotary Size Grader. Total pp.: 2.
Product data sheets; Fielder's Choice Direct; Gravity Table, Shape Separation, Length Grader, Size Separation and Aspirator. Total sheets: 5.
“Handbook of Semiconductor Silicon Technology,” edited by William C. O'Mara, Robert B. Herring and Lee P. Hunt, Noyes Publications, Park Ridge, New Jersey, USA, 1990, Ch. 2, pp. 39-58.

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