Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2004-03-08
2009-06-02
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S389000, C257S392000, C257S393000, C257S394000, C257S395000, C257S398000, C257S399000, C257S400000, C257SE27131, C257SE27132, C257SE27134, C257SE27135
Reexamination Certificate
active
07541627
ABSTRACT:
The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.
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Hynecek Jaroslav
Martin Russel A.
Merrill Richard B.
Foveon, Inc.
Lewis and Roca LLP
Sefer A.
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