Chemistry of inorganic compounds – Modifying or removing component of normally gaseous mixture – Direct contact with molten material
Patent
1983-06-30
1986-01-14
Rutledge, L. Dewayne
Chemistry of inorganic compounds
Modifying or removing component of normally gaseous mixture
Direct contact with molten material
423624, 423219, B01D 4702
Patent
active
045645094
ABSTRACT:
A method of removing oxygen and water vapor and other oxygen bearing gas species from reactant gases comprising the use of an appropriate solution containing an active gettering metal, selected from the group of aluminum, magnesium, calcium and lithium in liquid phase through a moderate temperature range, including room temperature and above as an oxygen gettering step, through the formation of an oxide of said metal wherein the said metal becomes continuously available for oxidation by exposing the said unreacted metal to the gas by bubbling the reactant gas through a ternary melt of gallium-indium and the said metal in a nonreactive container and maintaining in solid phase an excess of the active gettering method so that the capacity for removing the oxygen and water vapor and other oxygen bearing gas species may be extended by the active metal going into solution in the melt from the solid as the metal oxide is formed and goes out of solution.
REFERENCES:
patent: 1050902 (1913-01-01), Acker
patent: 2421568 (1947-06-01), Kurland
Shealy et al., "A New Technique for Gettering Oxygen and Moisture from Gases Used in Semiconductor Processing", Appl. Phys. Lett. 41(1), 1/7/82.
Hansen, "Constitution of Binary Alloys", 12/58, p. 145.
Tsai et al.; "Characterization of Al.sub.0.06 Ga.sub.0.94 As Grown by OMVPE for Low Current/High Efficiency Light Emitting Diodes", Int. Phys. Conf., 12/82.
Shealy et al.; "Improved Photoluminescence of Organometallic Vapor Phase Epitaxial AlGaAs Using a New Gettering Technique on an Arsine Source", App. Phys. Lett., vol. 42, 1/1/83.
Marinace, IBM Technical Disclosure Bulletin, vol. 15, No. 7, 12/72, "Room Temperature Scrubber".
Eastman Lester F.
Shealy James R.
Kastler S.
Northeast Semiconductor Inc.
Rutledge L. Dewayne
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