Method and apparatus for implementing a radiation hardened...

Details Method and apparatus for implementing a radiation hardened... Method and apparatus for implementing a radiation hardened...

2007-05-08

2007-05-08

Callahan, Timothy P. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S529000, C327S186000

Reexamination Certificate

active

11295985

ABSTRACT:
A non-radiation hardened N-channel transistor used in a power switching circuit functioning in a high-ionizing, radiation-dose environment. The circuit including at least one non-radiation hardened N-channel MOSFET switching transistors, the transistor having a gate, drain and a source. The circuit also includes a stored voltage source. The stored voltage source is in series with the gate of the at least one non-radiation hardened N channel MOSFET switching transistors. A high impedance bleeder resistor is connected to the stored voltage source for returning the positive terminal of the stored voltage source to the channel MOSFET source terminal.

REFERENCES:
patent: 5115143 (1992-05-01), Rohulich et al.
patent: 6335654 (2002-01-01), Cole
patent: 7116153 (2006-10-01), Pai

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