Method and apparatus for imaging electric fields

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348329, H04N 530

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058502556

ABSTRACT:
An optical beam (2) passes through a polarizer (10), a target (24), an analyzer (20) and onto a camera (22) where a plurality of images are formed. The images are digitized by a frame grabber (30) and processed by a general purpose computer (32) to form electric field images of the target.

REFERENCES:
patent: 4635082 (1987-01-01), Domoto et al.
patent: 4715689 (1987-12-01), O'Meara et al.
patent: 5150228 (1992-09-01), Liu et al.
patent: 5239598 (1993-08-01), Wright et al.
patent: 5325129 (1994-06-01), Henry et al.
patent: 5729285 (1998-03-01), Peterson et al.
2449-58, Dec. 1990, L. E. Kingsley et al.
R.A. Falk, et al., "Optical Probe Techniques for Avalanching Photoconductors,", Proc. 8th IEEE Pilsed Power Conference: 29-32, 1991.
K. H. schoenbach, et al., "Electric Field Measurements in Photoconductive GaAs Switches," Proc 8th IEEE Pulsed Power Conference: 105-8, 1991.
K. H. Schoenbach, et al., "Optical Measurements of the Electirc Field and Temperature Distribution in Photoconductive GaAs Switches," SPIE 1632: 54-64, 1992.
R. A. Falk, et al., "Dynamic Optical Probing of High-Power Photoconductors," 9th IEEE Pulsed Power Conference: 88-91, 1994.
J. C. Adams et al., "Below Band-Gap Electro-absorption in Bulk Semi-Insulating GaAs," Appl. Phys. Lett. 63: 633-5, 1993.
W. R. Donaldson, et al., "Electro-Optic Imaging of the Internal Fields in Hig-Power Photoconductive Switches," J. Appl. Phys. 68: 6453-7, 1990.
L. E. Kingsley, et al., "Electrooptic Imaging of Surface Electric Fields in High-Power Photoconductive Switches," IEEE Trans. on Electron Devices 37: 2449-58, 1990.
W. R. Donaldson, "Optical Probing of Field Dependent Effects in GaAs Photoconductive Switches," Proc 8th IEEE Pulsed Power Conference: 45-9, 1991.
W. R. Donaldson, et al., "The Effects of Doping on Photoconductive Switches as Determined by Electro-Optic Imaging," SPIE 1632: 88-97, 1992.
B. H. Kolner, et al., "Electro-Optic Sampling In GaAs Integrated Circuits," IEEE J. Quantum Electronics 22: 79-93, 1986.
K. J. Weingarten, et al., "Picosecond Optical Sampling of GaAs Integrated Circuits," IEEE J. Quantum Electronics 24: 198-220, 1988.
R. A. Falk, et al., "Direct Electo-Optic Measurement of the Internal Electric Fields of GaAs Photoconductive Switches," SPIE 2343: 2-13, 1994.
R. A. Falk, et al., "Electro-Optic Imagery of High-Voltage GaAs Photoconductive Switches," IEEE Trans. Electron Devices 42:43-9, 1995.
J. C. Adams, et al., "Electro-Optic Imagery of Internal Fields in (111) GaAs Photoconductors," IEEE Trans. Electron Devices 42: 1081-5, 1995.

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