Semiconductor device manufacturing: process – With measuring or testing
Patent
1998-01-14
2000-09-19
Picardat, Kevin M.
Semiconductor device manufacturing: process
With measuring or testing
438 4, 438 16, 324750, 324753, H01L 2166
Patent
active
061210595
ABSTRACT:
The present invention provides a method for identifying failure sites on a defective IC chip by utilizing a glass substrate equipped with a heating device and then coating a liquid crystal material layer on top. The liquid crystal device can be positioned in contact, or immediately adjacent to a surface of an IC device to be detected. After the liquid crystal temperature is raised to just below its transition temperature, a voltage signal can be fed into the IC device to trigger an overheating at a short or leakage to raise the liquid crystal material immediately adjacent to the short or leakage to a temperature above its transition temperature. Hot spots are thus produced to appear as bright spots for easy identification under an optical microscope.
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Picardat Kevin M.
Taiwan Semiconductor Manufacturing Company Ltd
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