Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-05-25
1997-08-19
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518511, 36518518, G11C 1134
Patent
active
056595042
ABSTRACT:
The invention is directed to a memory cell with a floating gate and a method for charging the floating gate using channel-initiated secondary electron injection (CISEI). In the device of the present invention, a positive bias voltage of about 1.1 volts to about 3.3 volts is applied between the drain and the source when introducing charge onto the floating gate. A negative bias voltage of about -0.5 volts or more negative is applied to the substrate and the source. The drain substrate bias induces a sufficient amount of secondary hot electrons to be formed with a sufficient amount of energy to overcome the energy barrier between the substrate and the floating gate to charge the floating gate.
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Bude Jeffrey Devin
O'Connor Kevin John
Pinto Mark Richard
Botos Richard J.
Hoang Huan
Lucent Technologies - Inc.
Nelms David C.
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