Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-08-02
2011-08-02
Stark, Jarrett (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S201000, C257S021000, C257SE29091, C257SE21359, C257SE31033, C438S571000
Reexamination Certificate
active
07989842
ABSTRACT:
The disclosure relates to a zero-bias heterojunction diode detector with varying impedance. The detector includes a substrate supporting a Schottky structure and an Ohmic contact layer. A metallic contact layer is formed over the Ohmic layer. The Schottky structure comprises a plurality of barrier layers and each of the plurality of barriers layers includes a first material and a second material. In one embodiment, the composition percentage of the second material in each of the barrier layers increases among the plurality of barrier layers from the substrate to the metal layer in order to provide a graded periodicity for the Schottky structure.
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Brar Berinder
Kazemi Hooman
Nguyen Chanh
Snell & Wilmer L.L.P.
Stark Jarrett
Teledyne Scientific & Imaging, LLC
Tynes, Jr. Lawrence
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