Method and apparatus for hermetically sealing semiconductor pack

Fishing – trapping – and vermin destroying

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Details

437214, 437215, 437219, 437220, 2291246, 229121, H01L 2160

Patent

active

054362024

ABSTRACT:
In a gas pressure controlled processing chamber, a semiconductor package is enclosed by a heater and is heated extensively (or in a full-face way) up to a predetermined temperature equal to or higher than a fusing point of pre-solder bumps applied on bonding portions of a substrate and a cap of the semiconductor package in a state in which the bonding portions are separated from each other. After the predetermined temperature has been reached, the bonding portions are brought into abutment. In the abutting state of the bonding portions, a gas pressure in the processing chamber is controlled and the semiconductor package is cooled. The control of the gas pressure in the processing chamber is made by successively measuring a temperature of the semiconductor package and determining a control target value of the gas pressure in accordance with the measured temperature value. By this gas pressure control, a solder fillet profile is corrected.

REFERENCES:
patent: 4355463 (1982-10-01), Burns
patent: 4426769 (1984-01-01), Grabbe
patent: 4764804 (1988-08-01), Sahara et al.
patent: 4836434 (1989-06-01), Takenaka et al.
patent: 4974769 (1990-12-01), Mizuishi

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