Method and apparatus for gas phase treating substrates

Details Method and apparatus for gas phase treating substrates Method and apparatus for gas phase treating substrates

1983-03-16

1984-12-04

Kittle, John E.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 46, 427 55, 118620, 118 501, 118641, 219 1057, B05D 306, B05B 500

Patent

active

044864612

ABSTRACT:
Despite the short lifetime of excited plasma gas, a very large number of wafers can be uniformly gas phase treated in the plasma state by using a single high frequency power supply coil or capacitor, not only for exciting reaction gas passing near the wafers in a reaction tube but also for heating radiators, surrounding the substrates, which heat the wafers.

REFERENCES:
patent: 4298629 (1981-11-01), Nozaki et al.
patent: 4339645 (1982-07-01), Miller
patent: 4401689 (1983-08-01), Ban
Chittick et al., The Preparation and Properties of Amorphous Silicon, Solid State Science, Jan. 1969, pp. 77-81.

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