Method and apparatus for gas feed control in a dry etching proce

Details Method and apparatus for gas feed control in a dry etching proce Method and apparatus for gas feed control in a dry etching proce

1979-09-28

1981-06-02

Gantz, Delbert E.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, 156345, 156643, C23F 100, C23C 1500

Patent

active

042709997

ABSTRACT:
A method and apparatus for obtaining a uniform gaseous molecular field under high vacuum conditions encountered in a dry etching process. In the method a source of a gas is provided and introduced into a manifold. The manifold feeds at least one nozzle and the gas is passed through the manifold and through the nozzle into a chamber maintained under vacuum conditions. The pressure of the gas and the configuration of the manifold and nozzle are such that the gas is caused to exit from the nozzle into the chamber under vacuum at sonic velocity.

REFERENCES:
patent: 3976555 (1976-08-01), Von Hartel
patent: 4033287 (1977-07-01), Alexander, Jr. et al.
A. Galicki et al., Plasma Reaction Chamber, IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, p. 2211.
H. M. Gartner et al., Selective Etch Rate Control Technique in Reactive Ion Etching, vol. 21, No. 3, IBM Tech. Disc. Bul., Aug. 1978, pp. 1032-1033.
H. M. Gartner et al., Reaction By-Products Collection Surface, IBM Tech. Disc. Bul., vol. 20, No. 8, Jan. 1978, p. 3106.
Encyclopedia Britannica, 15th edition, vol. 17: Sound, pp. 21, 22.

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