Method and apparatus for forming thin film and multilayer film

Coating apparatus – Gas or vapor deposition – With treating means

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118699, 118705, 118708, 118712, 118 501, C23C 1648

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active

054436460

ABSTRACT:
A thin film is formed on a substrate in a reaction chamber using a photo CVD technique by decomposing a reactive gas supplied to the reaction chamber by means of light irradiated through a light introducing window. The reduction in film deposition rate due to clouding of the light introducing window is corrected in order to form a thin film of a desired film thickness.

REFERENCES:
patent: 4435445 (1984-03-01), Allred et al.
patent: 4836140 (1989-06-01), Koji
patent: 4857139 (1989-08-01), Tashiro et al.
patent: 5005519 (1992-04-01), Egermeier et al.
patent: 5261961 (1993-11-01), Takasu
Appl. Phys. Lett., vol. 41, No. 11, Dec. 1, 1982 (Solanki et al).
Appl. Phys. Lett., vol. 43, No. 5, Sep. 1, 1983 (Solanki et al).

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