Coating apparatus – Gas or vapor deposition – With treating means
Patent
1990-06-22
1993-03-09
Hearn, Brian E.
Coating apparatus
Gas or vapor deposition
With treating means
118715, 156345, H01L 2100
Patent
active
051923700
ABSTRACT:
Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing.
REFERENCES:
patent: 4633809 (1987-01-01), Hirose et al.
patent: 4676195 (1987-06-01), Yasui et al.
patent: 4962727 (1990-10-01), Harada
R. L. Jackson et al., "Afterglow Chemical Vapor Deposition of SiO.sub.2 ", Solid State Technology, Apr. 1987, pp. 107-111.
B. Robinson et al., "High Quality Deposition of SiO.sub.2 Downstream From a Microwave Discharge", Mat. Res. Soc. Symp. Proc. vol. 98, 1987 Materials Research Society, pp. 313-319.
G. Lucovsky et al., "Deposition of Silicon-Based Dielectrics by Remote Plasma-Enchanced Chemical Vapor Deposition", Journal of Crystal Growth 86 1988, pp. 804-814.
Iwasa Tatsuya
Oda Masao
Goudreau George
Hearn Brian E.
Mitsubishi Denki & Kabushiki Kaisha
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