Method and apparatus for forming refractory metal films

Details Method and apparatus for forming refractory metal films Method and apparatus for forming refractory metal films

1991-11-29

1993-05-18

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427255, 4272551, 4273831, 427124, 427 99, C23C 1606, C23C 1656

Patent

active

052119874

ABSTRACT:
A method for improving the adhesion between a refractory metal film and a silicon substrate is disclosed, which comprises depositing the refractory metal film on the silicon substrate at a first temperature; and heating the contact surface between the deposited film and the silicon surface at a second temperature between 300.degree. and 600.degree. C., wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.

REFERENCES:
patent: 4619840 (1986-10-01), Goldman et al.
patent: 4794019 (1988-12-01), Miller
patent: 4988670 (1991-01-01), Itozaki et al.
Ohba et al., "Selective CVD Tungsten Silicide for VLSI Applications," IEDM 1987, Extended Abstract pp. 213-216.
Kotani et al., "A Highly Reliable Selective CVD-W Utilizing SiH.sub.4 Reduction for VLSI Contacts," IEDM 1987, Extended Abstract, pp. 217-220.
Green et al., "Structure of Selective Low Pressure Chemically Vapor-Deposited Films of Tungsten," J. Electrochem. Soc., vol., 132, No. 5, 1985, pp. 1243-1250.
Michael Diem, Michael Fisk and Jon Goldman, "Properties of Chemically Vapor-Deposited Tungsten Thin Films on Silicon Wafers", Thin Solid Films, 107 (1983) 39-43, Electronics and Optics.

Affiliated with

Also associated with

Rating

Method and apparatus for forming refractory metal films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for forming refractory metal films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming refractory metal films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-803177