Method and apparatus for forming redundant vias between conducti

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364491, 257774, G06F 1750

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active

057989370

ABSTRACT:
A method for forming one or more redundant vias (38a-38x) around a critical via (36) involves providing an integrated circuit design file (12) containing several overlay layers. Critical vias in the file (12) are identified via a step (16). Several redundant vias are serially placed around and connected in parallel to the critical via (36), and design rules are checked for each redundant via by performing steps (24-30). Redundant vias which do not violate design rules (26) are kept in a separate redundant overlay layer and added to the design of the integrated circuit. The added redundant vias increase the yield of the integrated circuit by bolstering the integrity of critical via connections.

REFERENCES:
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Cheng et al, Multi-Level Logic Optimization by Reducing Addition and Removal pp. 373-377.
Michalka et al, A Redundant Metal-Polymide Thin Film Interconnect Process for Wafer Scale Dimensions, pp. 158-164.
Uttecht et al, A Four-Level-Metal Fully Planarized Interconnect Technology for Dense High Performance Logic and SRAM Applications.
Michalka et al, "A Redundant Meta-Polymide Thin Film Interconnection Process for Wafer Scale Dimensions", 1990.
Evans et al, "Designing and Building--In Realiability in Advance Microelectronic Assemblies and Structures", 1995.
New Riverside University Dictionary, Webster, 1994, p. 987, Houghton Mifflin Company, Jan. 1994.

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