Method and apparatus for forming non-single crystal layer

Details Method and apparatus for forming non-single crystal layer Method and apparatus for forming non-single crystal layer

1987-11-30

1989-05-23

Niebling, John F.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

118723, 118728, 118729, 204298, C23C 1650

Patent

active

048329819

ABSTRACT:
A substrate introducing chamber, a reaction chamber and a substrate removing chamber are sequentially arranged with a shutter between adjacent ones of them. One or more substrates are mounted on a holder with their surfaces lying in vertical planes and carried into the substrate introducing chamber, the reaction chamber and the substrate removing chamber one after another. In the reaction chamber, a material gas is guided by gas guides to flow along the substrate surfaces in a limited space in which the substrates are disposed. The material gas is ionized into a plasma through the use of high-frequency energy obtained across a pair electrodes. The line of electric force of the high-frequency energy is directed along the substrate surfaces. By ionization of the material gas into the plasma, a non-single-crystal layer is formed, by deposition, on each substrate. At this time, the substrates are floating off the high-frequency energy source.

REFERENCES:
patent: 3911579 (1975-10-01), Lane et al.
patent: 4264393 (1981-04-01), Gorin et al.
patent: 4274936 (1981-06-01), Love
patent: 4399014 (1983-08-01), Engle
patent: 4401507 (1983-08-01), Engle
patent: 4438188 (1984-03-01), Shimatani et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4464415 (1984-08-01), Yamazaki
patent: 4582720 (1986-04-01), Yamazaki

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