Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-12-02
1998-05-05
Kunemund, Robert M.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 97, 117106, 117913, 117920, 117923, C30B 2504
Patent
active
057468265
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
The present invention relates to a method for forming a microstructure body on an inorganic substrate and an apparatus used therefor. In more detail, it relates to a method for producing a microstructure body on an inorganic substrate using a crystal growing technique, the microstructure body being used for producing electronic devices, photo devices, especially quantum interference devices of high speed, low consumption and high efficiency and an apparatus used therefor.
BACKGROUND ART
In order to form a semiconductor device, it is necessary to produce a structure comprising a substrate having microstructure body such as a thin film, a fine wire or the like or having a micro-layer on the surface of the substrate to form microstructure body specified on the directions perpendicular and parallel to the surface.
For formation of thin films, fine wires, etc., the chemical vapor phase growing method (hereinafter referred to as a "CVD method") and the molecular beam epitaxy method (hereinafter referred to as a "MBE method") have been widely known. The CVD method is higher in the film growing speed than the MBE method and is used for forming a film of several ten nm or more in thickness and on the other hand, the MBE method is used for forming a film in the unit of an atomic layer. In most of the current methods to produce semiconductor devices, the CVD method is used, but recently formation of thin films by the MBE method is also being used with the ongoing fining of integrated devices.
When semiconductor devices are produced by the MBE method, as vapor deposition on a substrate is carried out in ultra-high vacuum, the growth is controlled in the unit corresponding to an atomic layer, for example, by detecting the oscillation phenomenon (period of the oscillation corresponds to one atomic layer) of reflection electron diffraction intensity from the substrate. Furthermore, in order to impart the thus grown film with a function as a device, it is necessary to inject a dopant which supplies a carrier during the growth. However, this dopant has the problem that it acts also as a scattering body for the carrier to deteriorate the performance of the device. For solving this problem, there has been developed a method according to which when two substances differing in width of forbidden band, for example, GaAs and AlGaAs or SiGe and Si are hetero-grown at a steepness of atomic layer level, the dopant is injected into only the thin film comprising the substance of larger width of forbidden band such as AlGaAs or Si and the carrier is injected into only the thin film comprising the substance of small width of forbidden band (Japanese Patent Kokoku (Examined Publn.) No.59-53714). In this case, since the carrier moves through only the thin film comprising the substance of small width of forbidden band and free from the dopant, the carrier is not scattered by the dopant and therefore, performances of the device are not deteriorated and ultra-high speed operation of the device is possible.
On the other hand, for formation of microstructure body specified in interplanar direction, there have been employed lithography methods which use light, electron beam, X rays, ion beam, etc. and methods which comprise directly processing the surface using electron beam or ion beam. For example, the lithography technique is described in "Oyo Butsuri (Applied Physics)", Vol.61, No.4 (1992), pages 366-367. Various means such as reduction projection exposing and phase shifting method have been attempted. It is said that 0.1 Jm is nearly the limit as the minimum processing size. The direct processing of the surface using ion beam is described in "Shinku (Vacuum)", Vol.35, No.5 (1992), pages 512-519. It is stated that the processing accuracy depends on the beam diameter and 10 nm would be the limit. It is also stated that as compared with the lithography method, resolution is considerably high while fluctuation of about 5 nm in line width occurs.
Furthermore, as a method for forming a structure specified in interplanar dire
REFERENCES:
patent: 5013683 (1991-05-01), Petreff et al.
patent: 5134091 (1992-07-01), Chikyou et al.
patent: 5416331 (1995-05-01), Ichikawa et al.
Hasegawa Tsuyoshi
Hosoki Shigeyuki
Ichikawa Masakazu
Kohno Makiko
Nakahara Hitoshi
Hitachi , Ltd.
Kunemund Robert M.
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