Method and apparatus for forming low resistance lateral links in

Coating processes – Electrical product produced – Welding electrode

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219121LC, 219121LM, 427 86, 427 88, B05D 306, B05D 512, B23K 900

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046364048

ABSTRACT:
A method and apparatus for reliably forming low resistance links between two aluminum conductors deposited on an insulating polysilicon or amorphous silicon layer, employ a laser to bridge a lateral gap between the conductors. The apparatus and method are ideally suited for implementing defect avoidance using redundancy in large random access memories and in complex VLSI circuits. Only a single level of metal is employed and leads to both higher density and lower capacitance in comparison to prior techniques. Resistances in the range of one to ten ohms can be achieved for gap widths of approximately two to three microns.

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