Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-09-20
2005-09-20
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S001000, C438S680000
Reexamination Certificate
active
06946362
ABSTRACT:
The present invention discloses a method and apparatus for producing high surface area material films and membranes on substrates. In one application, patterns of spikes or bristles are produced on wafers and transferred to films, such as conductive polymer or metal films, by using repetitive and inexpensive processes, such as electroplating and embossing. Such a technique provides low cost, high surface area materials and allows reuse of expensive patterned silicon. Membranes with high surface area are extremely valuable in fuel cells since the power density is generally proportional to the surface area and the patterns may be used to cast inexpensive fuel cell electrodes.
REFERENCES:
patent: 4717630 (1988-01-01), Hamakawa et al.
patent: 5062025 (1991-10-01), Verhoeven et al.
patent: 5680292 (1997-10-01), Thompson, Jr. et al.
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6187210 (2001-02-01), Lebouitz et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6376096 (2002-04-01), Pearson et al.
patent: 2002/0020688 (2002-02-01), Sherman et al.
patent: 1229152 (2002-08-01), None
patent: WO 96/08036 (1996-03-01), None
patent: WO 02/43937 (2002-06-01), None
Dunfield John Stephen
Gore Makarand P.
Ghyka Alexander
Hewlett--Packard Development Company, L.P.
LandOfFree
Method and apparatus for forming high surface area material... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for forming high surface area material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for forming high surface area material... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3450550