Method and apparatus for forming hermetically sealed electrical

Electricity: electrical systems and devices – Electrostatic capacitors – Variable

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29 2542, 174 52FP, 357 51, H01G 700, H05K 502, H04N 909

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045257663

ABSTRACT:
Hermetically sealed electrical feedthrough conductors are formed across the periphery or boundary between a hermetically sealed region on a semiconductor substrate and a second or external region thereof by first forming a planar insulative layer on the surface of the silicon substrate along the predetermined path of the feedthrough conductor across the periphery, said insulative layer having at least one planar projection on each side thereof extending out from the path and coming to a point, and then forming thereon a planar metal feedthrough conductor layer that substantially covers the insulative layer, including corresponding metal planar projections. An insulator element sized to encapsulate the region to be sealed is then mallory bonded to the periphery, including the feedthrough conductor, so as to form a hermetic seal along the entire periphery including in the region of said feedthrough conductor. The planar projections form a compression bond that eliminates any tenting region that would otherwise form beneath the insulator element at the edges of the feedthrough conductor and the underlying insulative layer.

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Wallis, G. & Pomerantz, D., "Field Assisted Glass-Metal Sealing", Journal of Applied Physics, vol. 40, No. 10, Sep. 1969.
Lee, Y. S. & Wise, K. D., "A Batch-Fabricated Silicon Capacitive Pressure Transducer with Low Temperature Sensitivity", IEEE Transactions on Electron Devices, vol. ED-29, No. 1, Jan. 1982.
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