Method and apparatus for forming deposited film

Details Method and apparatus for forming deposited film Method and apparatus for forming deposited film

1994-12-28

1996-11-05

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 4, 437101, 136258, 427573, 427574, 427575, 427578, 118718, 118719, 118723R, 118723MW, 118723E, 118724, 118725, H01L 3120

Patent

active

055717497

ABSTRACT:
A plasma CVD method adapted to a roll-to-roll process or the like wherein the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing, by constituting the apparatus structure in such a manner that the deposited film is formed on an elongated substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer forming discharge chamber at a rate of 4.degree. C./second or higher immediately in front of an inlet to the discharge chamber and cooling the same at a rate of 4.degree. C./second or higher immediately at the outlet of the discharge chamber so that a stacked-layer type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dopant diffusion.

REFERENCES:
patent: 4389970 (1983-06-01), Edgerton
patent: 4400409 (1983-08-01), Izu et al.
patent: 4470369 (1984-09-01), Edgerton
patent: 4951602 (1990-08-01), Kanai
patent: 5258075 (1993-11-01), Kurokawa
patent: 5510151 (1996-04-01), Matsuyama
Patent Abstracts of Japan, vol. 9, No. 69 (E-305) Mar. 29, 1985.
Patent Abstracts of Japan, vol. 10, No. 87 (E-393) Apr. 5, 1986.
Guha et al., "A Novel Design for Amorphous Silicon Alloy Solar Cells," (20th IEEE PV SEC, 1988) pp. 79-84.

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