Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2007-12-25
2007-12-25
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S005000, C117S008000, C117S009000, C219S121650, C219S121730
Reexamination Certificate
active
10802836
ABSTRACT:
A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous light intensity distribution, and a second irradiation system which irradiates the predetermined area with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an area in which the light intensity is minimum.
REFERENCES:
patent: 6870126 (2005-03-01), Jyumonji et al.
Chang-Ho Oh, et al., Japan Journal of Applied Physics, vol. 37, pp. L492-L495, “A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films”, May 1, 1998.
M. Nakata, et al., The Japan Society of Applied Physics, vol. 40, part 1, No. 5, pp. 3049-3054, “A New Nucleation-Site-Control Excimer-Laser-Crystallization Method”, May 2001.
M. Matsumura, IDW '02 AMD5-1, pp. 263-266, “Advanced Laser-Crystallization Technologies of Si for High-Performance TFTs”, 2001.
International Display Workshops, pp. 1-6, “Advanced Laser-Crystallization Technologies of Si for High-Performances TFTs” (with partial English translation), Feb. 2002.
Journal of The Surface Science Society of Japan, vol. 21, No. 5, pp. 278-287, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, 2000 (with partial English translation).
Matsumura Masakiyo
Taniguchi Yukio
Advanced LCD Technologies Development Center Co. Ltd.
Kunemund Robert
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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