Method and apparatus for forming contact hole

Details Method and apparatus for forming contact hole Method and apparatus for forming contact hole

2005-03-30

2009-11-17

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C216S017000, C438S689000

Reexamination Certificate

active

07618898

ABSTRACT:
A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film, including: etching the insulating film using reactive ion etching to a depth whereat said irregularity does not disappear; and sputter-etching the surface of the amorphous Si.

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