Abrading – Flexible-member tool – per se
Reexamination Certificate
2000-08-30
2003-07-15
Eley, Timothy V. (Department: 3724)
Abrading
Flexible-member tool, per se
C051S298000, C451S550000
Reexamination Certificate
active
06592443
ABSTRACT:
TECHNICAL FIELD
This invention relates to planarizing pads and to methods and apparatuses for forming and using planarizing pads, such as disposable and/or conditionless planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates.
BACKGROUND
Mechanical and chemical-mechanical planarization processes (“CMP”) are used in the manufacturing of electronic devices for forming a flat surface on semiconductor wafers, field emission displays and many other microelectronic-device substrate assemblies. CMP processes generally remove material from a substrate assembly to create a highly planar surface at a precise elevation in the layers of material on the substrate assembly. 
FIG. 1
 schematically illustrates an existing web-format planarizing machine 
10
 for planarizing a substrate 
12
. The planarizing machine 
10
 has a support table 
14
 with a top-panel 
16
 at a workstation where an operative portion (A) of a planarizing pad 
40
 is positioned. The top-panel 
16
 is generally a rigid plate to provide a flat, solid surface to which a particular section of the planarizing pad 
40
 may be secured during planarization.
The planarizing machine 
10
 also has a plurality of rollers to guide, position and hold the planarizing pad 
40
 over the top-panel 
16
. The rollers include a supply roller 
20
, first and second idler rollers 
21
a 
and 
21
b
, first and second guide rollers 
22
a 
and 
22
b
, and take-up roller 
23
. The supply roller 
20
 carries an unused or pre-operative portion of the planarizing pad 
40
, and the take-up roller 
23
 carries a used or post-operative portion of the planarizing pad 
40
. Additionally, the first idler roller 
21
a 
and the first guide roller 
22
a 
stretch the planarizing pad 
40
 over the top-panel 
16
 to hold the planarizing pad 
40
 stationary during operation. A motor (not shown) drives at least one of the supply roller 
20
 and the take-up roller 
23
 to sequentially advance the planarizing pad 
40
 across the top-panel 
16
. Accordingly, clean pre-operative sections of the planarizing pad 
40
 may be quickly substituted for used sections to provide a consistent surface for planarizing and/or cleaning the substrate 
12
.
The web-format planarizing machine 
10
 also has a carrier assembly 
30
 that controls and protects the substrate 
12
 during planarization. The carrier assembly 
30
 generally has a substrate holder 
32
 to pick up, hold and release the substrate 
12
 at appropriate stages of the planarizing process. Several nozzles 
33
 attached to the substrate holder 
32
 dispense a planarizing solution 
44
 onto a planarizing surface 
42
 of the planarizing pad 
40
. The carrier assembly 
30
 also generally has a support gantry 
34
 carrying a drive assembly 
35
 that translates along the gantry 
34
. The drive assembly 
35
 generally has an actuator 
36
, a drive shaft 
37
 coupled to the actuator 
36
, and an arm 
38
 projecting from the drive shaft 
37
. The arm 
38
 carries the substrate holder 
32
 via a terminal shaft 
39
 such that the drive assembly 
35
 orbits the substrate holder 
32
 about an axis B—B (as indicated by arrow R
1
). The terminal shaft 
39
 may also rotate the substrate holder 
32
 about its central axis C—C (as indicated by arrow R
2
).
The planarizing pad 
40
 and the planarizing solution 
44
 define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of the substrate 
12
. The planarizing pad 
40
 used in the web-format planarizing machine 
10
 is typically a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material. In fixed-abrasive applications, the planarizing solution is a “clean solution” without abrasive particles because the abrasive particles are fixedly distributed across the planarizing.surface 
42
 of the planarizing pad 
40
. In other applications, the planarizing pad 
40
 may be a non-abrasive pad without abrasive particles, composed of a polymeric material (e.g., polyurethane) or other suitable materials. The planarizing solutions 
44
 used with the non-abrasive planarizing pads are typically CMP slurries with abrasive particles and chemicals to remove material from a substrate.
To planarize the substrate 
12
 with the planarizing machine 
10
, the carrier assembly 
30
 presses the substrate 
12
 against the planarizing surface 
42
 of the planarizing pad 
40
 in the presence of the planarizing solution 
44
. The drive assembly 
35
 then orbits the substrate holder 
32
 about the axis B—B and optionally rotates the substrate holder 
32
 about the axis C—C to translate the substrate 
12
 across the planarizing surface 
42
. As a result, the abrasive particles and/or the chemicals in the planarizing medium remove material from the surface of the substrate 
12
.
The CMP processes should consistently and accurately produce a uniformly planar surface on the substrate assembly to enable precise fabrication of circuits and photo-patterns. During the fabrication of transistors, contacts, interconnects and other features, many substrate assemblies develop large “step heights” that create a highly topographic surface across the substrate assembly. Yet, as the density of integrated circuits increases, it is necessary to have a planar substrate surface at several intermediate stages during substrate assembly processing because non-uniform substrate surfaces significantly increase the difficulty of forming sub-micron features. For example, it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on non-uniform substrate surfaces because sub-micron photolithographic equipment generally has a very limited depth of field. Thus, CMP processes are often used to transform a topographical substrate surface into a highly uniform, planar substrate surface.
One problem with conventional CMP methods is that the planarizing surface 
42
 of the planarizing pad 
40
 can become glazed with accumulations of slurry and/or material removed from the substrate 
12
 or the planarizing pad 
40
. One conventional approach to addressing this problem is to remove the accumulations by conditioning the planarizing pad 
40
, for example, by abrading the planarizing pad 
40
 with an abrasive disk (not shown). A drawback with this approach is that the equipment required for conditioning the planarizing pad 
40
 adds complexity to the planarizing machine 
10
 and, if the conditioning operation is performed separately from the planarizing operation, it reduces the time that the planarizing pad 
40
 is available for planarizing. Conventional conditioning processes can thus limit the overall efficiency of the apparatus.
One approach to address this drawback is to eliminate the need to condition the pad by making the planarizing surface or the entire planarizing pad disposable. For example, U.S. application Ser. No. 09/001,333 discloses a disposable planarizing pad film made from materials such as Mylar or polycarbonate. The pads disclosed in Application Ser. No. 09/001,333 can have microfeatures of different heights that entrap small volumes of an abrasive slurry and maintain the slurry in contact with the substrate. The microfeatures can be formed using a variety of techniques, such as embossing or photo-patterning.
One conventional method for photo-patterning is shown schematically in 
FIGS. 2A-2E
. As shown in 
FIG. 2A
, a photopolymer composite 
50
 is formed by disposing a photopolymer resist material 
53
 on a substrate polymer 
52
 which is supported by support layer 
51
. The photopolymer resist material 
53
 is then exposed to a radiation source 
63
. A mask 
60
 having opaque portions 
61
 and transmissive portions 
62
 blocks the radiation emitted from the radiation source 
63
 from striking unexposed portions 
55
 of the photopolymer resist material 
53
, while allowing the radiation to strike exposed portions 
54
.
As shown schematically in 
FIG. 2B
, the exposed portions 
54
 change chemical characteristics as a result of being exposed to the radiation so
Joslyn Michael J.
Kramer Stephen J.
Eley Timothy V.
Perkins Coie LLP
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