Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1994-12-01
1995-12-05
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117 3, 117 83, C30B 1102
Patent
active
054719453
ABSTRACT:
A method of manufacturing a semiconductor boule, the method comprises providing a chamber having a crucible, introducing a material for forming the boule and a liquid encapsulant having a softening point into the crucible, heating the crucible to melt the material, cooling the material to grow a boule, and separating the grown boule from the crucible at a temperature higher than the softening point of the encapsulant. An apparatus for manufacturing a semiconductor boule which comprises a chamber; a crucible for containing a seed crystal, a starting material, and a liquid encapsulant; a crucible shaft for holding the crucible; and a seed crystal shaft for holding the seed crystal and the boule formed by the seed crystal and starting material, the seed crystal shaft being elevated and rotated independently of the crucible shaft.
REFERENCES:
patent: 4946542 (1990-08-01), Clemans
patent: 5064497 (1991-11-01), Clemans et al.
patent: 5131975 (1992-07-01), Barret-Courchesne
patent: 5252175 (1993-10-01), Bachowski et al.
Fujii Takashi
Nishio Johji
Kabushiki Kaisha Toshiba
Kunemund Robert
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