Method and apparatus for forming a photodiode

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257SE31124, C257S431000, C438S098000, C136S256000

Reexamination Certificate

active

07923802

ABSTRACT:
Embodiments of the invention provide a method and an apparatus for forming a photodiode. One embodiment provides a thin dielectric layer sandwiched between two metallic plates (electrodes), one or both of which are periodically patterned in one or two dimensions. The effect of the pattern is to couple incident light within some range of wavelength and/or incidence angles to surface excitations of the metal surface called surface plasmons, enhancing the electric field near the surface and resulting in dramatically increased photo-absorption and carrier generation in the dielectric layer.

REFERENCES:
patent: 3475609 (1969-10-01), Schneider
patent: 3622844 (1971-11-01), Barelli et al.
patent: 4011016 (1977-03-01), Layne et al.
patent: 4727254 (1988-02-01), Wlodarczyk
patent: 4975919 (1990-12-01), Amada et al.
patent: 5985689 (1999-11-01), Gofuku et al.
patent: 6040936 (2000-03-01), Kim et al.
patent: 6992774 (2006-01-01), Creasey et al.
patent: 7223960 (2007-05-01), Mouli
patent: 7245808 (2007-07-01), Sato et al.
patent: 7417219 (2008-08-01), Catrysse et al.
patent: 7544922 (2009-06-01), Ueyanagi et al.
patent: 2006/0192115 (2006-08-01), Thomas et al.
patent: 2006/0291780 (2006-12-01), Sato et al.
patent: 2007/0096087 (2007-05-01), Catrysse et al.
patent: 2008/0090318 (2008-04-01), Fattal et al.
patent: 2008/0212102 (2008-09-01), Nuzzo et al.
patent: 2008/0266640 (2008-10-01), Wang et al.
patent: 2008/0278728 (2008-11-01), Tetz et al.
patent: 2008/0290434 (2008-11-01), Chen et al.
M. Rahman, et al. “Theory of a Metal-Semiconductor Photodiode With Granting Coupling of the Incident Light to Surface Plasma Waves” J. Appl. Phys. 66 (1), Jul. 1, 1989.

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