Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-04-05
2005-04-05
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C359S245000, C359S248000
Reexamination Certificate
active
06876050
ABSTRACT:
A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal silicon in a substrate such as a silicon-on-insulator (SOI) wafer and can be used in a variety of high bandwidth applications including multi-processor, telecommunications, networking or the like. In one embodiment, a capacitive structure includes single crystal silicon disposed in a first semiconductor material with an insulating layer disposed between the single crystal silicon and the semiconductor material. In one embodiment, a capacitive structure may be formed by laterally growing single crystal silicon through an opening in a trench adjacent to a trench where the capacitive structures is formed.
REFERENCES:
patent: 4845725 (1989-07-01), Welch et al.
patent: 4897362 (1990-01-01), Delgado et al.
patent: 6215577 (2001-04-01), Koehl et al.
patent: 6351326 (2002-02-01), Morse et al.
patent: 6421473 (2002-07-01), Paniccia et al.
patent: 6470104 (2002-10-01), Paniccia et al.
patent: 6483954 (2002-11-01), Koehl et al.
patent: 6653161 (2003-11-01), Morse
patent: 20030077037 (2003-04-01), Ovadia et al.
Schaub, J.D., et al., “Resonant-Cavity-Enhanced High-Speed Si Photodiode Grown by Epitaxial Lateral Overgrowth,” IEEE Photonics Technology Letters, vol. 11, No. 12, Dec., 1999, pp. 1647-1649.
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