Method and apparatus for flowing gases into a manifold at high p

Details Method and apparatus for flowing gases into a manifold at high p Method and apparatus for flowing gases into a manifold at high p

1996-07-02

1999-12-07

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, 20429807, C23C 1600, C23F 102

Patent

active

059965282

ABSTRACT:
A reactor for plasma CVD or plasma etch is provided with a first electrode held to ground potential which supports the workpiece, e.g., a semiconductor wafer. A second electrode is spaced from the first electrode to form a gap therebetween, and has an electrical potential suitable to form an ionizing electrical field within the gap. The second electrode also has a gas inlet and a gas outlet. Preferably, the gas outlet includes a plurality of gas outlets. The reactor includes a porous plug constructed and arranged with the gas inlet to isolate the second electrode from ground potential. This plug has a plurality of pores which are sized to permit passage of gas therethrough and to substantially inhibit electrical discharge therein. Accordingly, gas injected through the gas inlet of the second electrode passes through the plug without ionization; and that gas thereafter exits from the gas outlet to provide substantially uniform ionization within the gap. Multiple gases and porous plugs can be used in tandem to mix and provide uniform plasma generation. A metal tube, substantially at ground potential, connects directly to the reactor and adjacent to the porous plug to provide a sturdy conduit for gases injected into the reactor and into regions of high potential.

REFERENCES:
patent: 4496423 (1985-01-01), Walton
patent: 4595452 (1986-06-01), Landau et al.
patent: 5273588 (1993-12-01), Foster et al.

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