Method and apparatus for film deposition

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

Reexamination Certificate

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C427S248100

Reexamination Certificate

active

07011866

ABSTRACT:
A reaction gas made of a hydrogen-based carrier gas and a silane gas or the like is brought in contact with a heated catalyzer of tungsten or the like, and a DC voltage not higher than a glow discharge starting voltage or a voltage produced by superimposing an AV voltage or an RF voltage on the DC voltage is applied on the produced reactive species, so as to provide kinetic energy and carry out vapor growth of a predetermined film on a substrate, thereby providing a film of high quality.

REFERENCES:
patent: 3769670 (1973-11-01), Schrank
patent: 4668365 (1987-05-01), Foster et al.
patent: 4961958 (1990-10-01), Desphandey et al.
patent: 4974544 (1990-12-01), Ohta
patent: 5058527 (1991-10-01), Ohta et al.
patent: 5112466 (1992-05-01), Ohta et al.
patent: 5145712 (1992-09-01), Jesser et al.
patent: 5160544 (1992-11-01), Garg et al.
patent: 5378285 (1995-01-01), Mitani et al.
patent: 5384018 (1995-01-01), Ramm et al.
patent: 5464499 (1995-11-01), Moslehi et al.
patent: 5554222 (1996-09-01), Nishihara et al.
patent: 5900161 (1999-05-01), Doi
patent: 5942854 (1999-08-01), Ryoji et al.
patent: 6045877 (2000-04-01), Gleason et al.
patent: 6101972 (2000-08-01), Bluck et al.
patent: 6161499 (2000-12-01), Sun et al.
patent: 6203862 (2001-03-01), Bluck et al.
patent: 6211622 (2001-04-01), Ryoji et al.
patent: 6225241 (2001-05-01), Miyoshi
patent: 6291343 (2001-09-01), Tseng et al.
patent: 6349669 (2002-02-01), Matsumura et al.
patent: 2004/0134429 (2004-07-01), Yamanaka et al.
patent: 61-247018 (1986-04-01), None
patent: 63-40314 (1988-02-01), None
patent: 6-25856 (1994-02-01), None
patent: 10-72284 (1998-03-01), None
patent: 10-72286 (1998-03-01), None
patent: WO11/44033 (2000-07-01), None

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