Method and apparatus for feeding gas into a chamber

Details Method and apparatus for feeding gas into a chamber Method and apparatus for feeding gas into a chamber

1994-10-21

1996-02-06

Hepperle, Stephen M.

Fluid handling

Processes

137 14, 137566, 137597, 137601, F16K 1112

Patent

active

054889677

ABSTRACT:
A vacuum deposition chamber alternately receives a reactive gas and an inert gas during a process in which a thin film is formed on a wafer in the chamber. The inert gas flows through a first pressure regulator, a first feed line and a first changeover valve into the chamber. The reactive gas flows through a second pressure regulator, a second feed line and a second changeover valve into the chamber. A vent line is connected to a vacuum pump and a pressure regulating valve which vents to the atmosphere to thereby control the vacuum pressure in the vent line. A first shunt valve is connected between the vent line and the first feed line and a second shunt valve is connected between the vent line and the second feed line. When the first changeover valve is opened to permit flow of reactive gas into the chamber, the second shunt valve is opened to evacuate the second feed line and when the second changeover valve is opened to permit flow of inert gas into the chamber, the first shunt valve is opened to evacuate the first feed line. By alternately evacuating the feed lines, pressure fluctuations which usually occur in the chamber at the time of changeover from one gas to the other, are suppressed.

REFERENCES:
patent: 4019524 (1977-04-01), Whitson et al.
patent: 4037622 (1977-07-01), Osheroff et al.
patent: 4739787 (1988-04-01), Stoltenberg
patent: 5259233 (1993-11-01), Brandt
patent: 5277215 (1994-01-01), Yanagawa et al.
patent: 5368062 (1994-11-01), Okumura et al.

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