Method and apparatus for fabricating weak link junctions on vici

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

505234, 505329, 505702, C30B 2502

Patent

active

056565755

ABSTRACT:
The present invention provides a superconducting device having a weak link junction with an angle at the grain boundary between the two superconductor crystals being variable. The angle at the junction is substantially equivalent to a vicinal angle for the substrate. Accordingly, the magnitude of the angle at the junction can be varied by varying the vicinal angle of the substrate. This result can be realized by using buffer layers of different compositions underlying the superconducting materials on either side of the weak link junction. Weak link junctions and reproducible properties are essential for a variety of electronic and magnetic sensing devices.

REFERENCES:
patent: 5157466 (1992-10-01), Char et al.
patent: 5366953 (1994-11-01), Char et al.
patent: 5464812 (1995-11-01), Inada et al.
Sugimoto et al. "Evidence for Step Flow Growth of Bi-Sr-Ca-Cu-0 Thin Films on Vicinal Substrates in", Appl. Phys. Letters, 63(19), 8 Nov. 1993 pp. 2697-2699.
Char et al., "Bi-Epitaxial Grain Boundary Junctions In YBa.sub.2 Cu.sub.3 0.sub.7 ", American Institute of Physics, Appl. Phys. Lett., vol. 59, No. 6, 5 Aug. 1991, pp. 733-735.
Dimos et al., "Orientation of Grain-Boundary Critical Currents In YBa.sub.2 Cu.sub.3 0.sub.7-.delta. Bicrystals", The American Physical Society, Physical Review Letters, vol. 61, No. 2, 11 Jul. 1988, pp. 219-222.
Lowndes et al., "Suppression of the Spiral-Growth Mechanism In Epitaxial YBa.sub.2 Cu.sub.3 0.sub.7-.times. Films Grown on Miscut Substrates", American Institute of Physics, Appl. Phys. Lett. 61, (7), 17 Aug. 1992, pp. 852-854.
Mannhart et al., "High-T.sub.c Thin Films. Growth Modes--Structure--Applications", Invited Presentation at NATO ASI Course on Materials and Crystallographic Aspects of HighT.sub.c Superconductivity, Erice, Italy, May 17-29, 1993, pp. 1-18.
Streiffer et al., "Growth of YBa.sub.2 Cu.sub.3 0.sub.7-.delta. on Vicinally Polished Mg0 Substrates", American Institute of Physics, Appl. Phys. Lett. 57 (23), 3 Dec. 1990, pp. 2501-2503.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for fabricating weak link junctions on vici does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for fabricating weak link junctions on vici, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating weak link junctions on vici will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-160329

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.