Method and apparatus for fabricating semiconductor device with p

Details Method and apparatus for fabricating semiconductor device with p Method and apparatus for fabricating semiconductor device with p

1996-03-08

1998-05-05

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 19, 257 21, 257201, 257466, 385 49, 385130, H01L 310232

Patent

active

057478600

ABSTRACT:
On a surface of a silicon substrate, N.sup.+ type buried layer and N-type epitaxial layer are formed in order, and an isolation layer reaching the silicon substrate from the surface of the N-type epitaxial layer is formed to define a photodiode. In the surface of the photodiode, a rectangular recess is selectively formed toward inside of the N-type epitaxial layer. On the side face of the recess, a silicon oxide layer is formed. In the region surrounded by the silicon oxide layer, a photo absorbing layer and so forth is formed. On the other hand, in an optical waveguide, a LOCOS oxide layer is formed toward inside from the surface of the N-type epitaxial layer. The N-type epitaxial layer is sandwiched between the LOCOS oxide layer and the N.sup.+ type buried layer. The refraction indexes of the LOCOS oxide layer and the N.sup.+ type buried layer are smaller than that of the N-type epitaxial layer. Thus, the N-type epitaxial layer serves as an optical passage to efficiently introduce a light beam into the photo absorbing layer of the photodiode.

REFERENCES:
patent: 4210923 (1980-07-01), North
patent: 4847665 (1989-07-01), Mand
patent: 5357122 (1994-10-01), Okubura et al.
patent: 5444805 (1995-08-01), Mayer
"Integrated Waveguide-Photodetector Using Si/SiGe Multiple . . . ", V.P. Kesan, P.G. May, E. Bassous, and S.S. Iyer, IEDM 90-637, pp. 26.71-4.
Integrated Waveguides and Photodetectors in SiGe for 1.3 .mu.m Operation.
IEEE Photonics Tech. Lett. Splett et al vol. 6 No. 1 Jan. 1994 pp. 59-61.

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