Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-12-13
2005-12-13
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S192000, C257S413000
Reexamination Certificate
active
06974968
ABSTRACT:
An integrated circuit includes a substrate with a gate section projecting upwardly between spaced source and drain regions. Side walls project upwardly beyond the gate section on opposite sides thereof. A dielectric layer has an upper surface spaced above the upper ends of the side walls. Contact openings are created through the dielectric layer, so as to expose surface portions on the source and drain regions. Conductive contacts are formed in the contact openings. The portions of the side walls which project above the gate section permit misalignment of the contact openings, without exposing any portion of the gate electrode during formation of either contact opening.
REFERENCES:
patent: 5306665 (1994-04-01), Manabe
patent: 5686331 (1997-11-01), Song
patent: 5981365 (1999-11-01), Check et al.
patent: 6096642 (2000-08-01), Wu
patent: 6140219 (2000-10-01), Dennison
patent: 6194297 (2001-02-01), Cheng
patent: 6211048 (2001-04-01), Hwang et al.
patent: 6232183 (2001-05-01), Chen et al.
patent: 6245621 (2001-06-01), Hirohama et al.
patent: 6297136 (2001-10-01), Son
patent: 6376344 (2002-04-01), Houston
patent: 6479357 (2002-11-01), Jung
Stanley Wolf Silicon Processing for The VSLI Era vol. 2 Lattice Press 1990 p. 280.
U.S. Appl. No. 09/661,735, filed Sep. 14, 2000 by Inventors Theodore W. Houston and Keith A. Joyner, entitled “Semiconductor Device with Fully Self-Aligned Local Interconnects, and Method for Fabricating the Device”.
Blum David S.
Garner Jacqueline J.
LandOfFree
Method and apparatus for fabricating self-aligned contacts... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for fabricating self-aligned contacts..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for fabricating self-aligned contacts... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3471437