Method and apparatus for fabricating near spherical semiconducto

Details Method and apparatus for fabricating near spherical semiconducto Method and apparatus for fabricating near spherical semiconducto

1999-12-28

2000-09-19

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117202, 117206, 117223, 117902, 117931, C30B 3500, C30B 1700

Patent

active

061206024

ABSTRACT:
An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

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