Method and apparatus for fabricating near spherical semiconducto

Details Method and apparatus for fabricating near spherical semiconducto Method and apparatus for fabricating near spherical semiconducto

1998-10-15

2000-08-22

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

117 74, 117 75, 117 76, 117920, 117931, 75340, 75341, 75363, C30B 1700, B22F 906

Patent

active

061066141

ABSTRACT:
An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

REFERENCES:
patent: 3099041 (1963-07-01), Kaufmann
patent: 3998659 (1976-12-01), Wakefield
patent: 5420744 (1995-05-01), Asada et al.

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